BAS32L High-speed switching diode Rev. 05 — 3 January 2008 Product data sheet Product profile 1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in asmall hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package. 1.2 Features
■ Small hermetically sealed glass SMD package
■ High-speed switching■ Reverse polarity protection
1.4 Quick reference data Quick reference data Parameter Conditions
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. NXP Semiconductors High-speed switching diode Pinning information Description Simplified outline
The marking band indicates the cathode. Ordering information Ordering information Type number Description
hermetically sealed glass surface-mounted package;
Marking codes Type number Marking code Limiting values Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Parameter Conditions
NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134). Parameter Conditions
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Thermal characteristics Thermal characteristics Parameter Conditions
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Characteristics Characteristics
Tamb = 25 °C unless otherwise specified. Parameter Conditions
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
When switched from IF = 50 mA; tr = 20 ns.
NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode Forward current as a function of ambient Forward current as a function of forward temperature; derating curve Non-repetitive peak forward current as a Reverse current as a function of junction function of pulse duration; maximum values temperature
NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode Diode capacitance as a function of reverse voltage; typical values Test information
Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ ≤ 0.05
Reverse recovery time test circuit and waveforms
Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005
Forward recovery voltage test circuit and waveforms
NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode Package outline Package outline SOD80C 10. Packing information Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. Type number Description Packing quantity
For further information and the availability of packing methods, see
NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode 11. Soldering Reflow soldering footprint SOD80C Fig 10. Wave soldering footprint SOD80C
NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode 12. Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes • The format of this data sheet has been redesigned to comply with the new identity • Legal texts have been adapted to the new company name where appropriate. • : amended • or IR reverse current amended from mA to µA • • : updated
NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode 13. Legal information Data sheet status Document status Product status Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product statusinformation is available on the Internet at URL
malfunction of an NXP Semiconductors product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. NXP Semiconductors accepts no liability for inclusion and/or use of
Draft — The document is a draft version only. The content is still under
NXP Semiconductors products in such equipment or applications and
internal review and subject to formal approval, which may result in
therefore such inclusion and/or use is at the customer’s own risk.
modifications or additions. NXP Semiconductors does not give anyrepresentations or warranties as to the accuracy or completeness of
Applications — Applications that are described herein for any of these
information included herein and shall have no liability for the consequences of
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for thespecified use without further testing or modification. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended Limiting values — Stress above one or more limiting values (as defined in
for quick reference only and should not be relied upon to contain detailed and
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
full information. For detailed and full information see the relevant full data
damage to the device. Limiting values are stress ratings only and operation of
sheet, which is available on request via the local NXP Semiconductors sales
the device at these or any other conditions above those given in the
office. In case of any inconsistency or conflict with the short data sheet, the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold Disclaimers
subject to the general terms and conditions of commercial sale, as publishedat , including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unless
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14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 NXP Semiconductors High-speed switching diode 15. Contents
Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’. NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: [email protected]Date of release: 3 January 2008 Document identifier: BAS32L_5
C L I N I C A L P R A C T I C E Practical Scar Care he first consideration in scar treatment is T management of the open wound are influ- disease characterized by ential. Providing a healthy environment for the wound Keloid scar Once the wound is closed, treatment can begin tocalled keloid scars, and they are very different thanprevent too much scarring. Over the past two decades,
LINGUISTIC CONTRIBUTIONS TO THE SUCCESS OF Brand naming is an important domain of language use in modern commercial society and a field of potential pragmatic interest and investigation. Brand naming is a one-way communicative activity in which brand names are created to communicate the right information to the right people in a right manner. This article argues that linguistic characteristics o